N-Channel, 20V, 0.90A, Small Signal MOSFET
Descriptions
The FD2020EA is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product FD2020EA is Pb-free and Halogen-free.
Features
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● Small package SOT-23
● ESD: 2KV
Applications
● DC-DC converter circuit
● Small Signal Switch
● Load Switch
● Level Shift
Absolute Maximum ratings
Thermal resistance ratings
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Electronics Characteristics (Ta=25o C, unless otherwise noted)
Typical Characteristics (Ta=25o C, unless otherwise noted)
Package outline dimensions
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