Description

The 03N10A uses advanced trench technology and design to provide excellent R_DS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features 

 ● V_DS = 100V,I_D =3.0A

 R_DS(ON)<135mΩ @ V_GS=10V

 ● High density cell design for ultra low Rdson

Application

● Power switching application

● Hard switched and high frequency circuits 

● Uninterruptible power supply

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Thermal Characteristic

Electrical Characteristics (T_J=25℃unless otherwise noted)

1. Repetitive Rating: Pulse width limited by maximum junction temperature. 

2. Surface Mounted on FR4 Board, t ≤ 10 sec. 

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 

4. Guaranteed by design, not subject to production